000			01970nam a2200217Ia 4500
003			NULRC
005			20250520102902.0
008			250520s9999 xx 000 0 und d
020			_a750672811
040			_cNULRC
050			_aTK 7871.92 .D94 2000
100			_aDye, Norman _eauthor
245		0	_aRadio frequency transistors : _bprinciples and practical applications / _cNorman Dye and Helge Granberg
250			_aSecond edition.
260			_aBoston, Massachusetts : _bButterworth Heinemann ; _cc2000
300			_axii, 299 pages : _billustrations ; _c25 cm.
520			_aRadio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction. An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices. Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies.
650			_aPOWER TRANSISTORS
700			_aGranberg, Helge _eco-author
942			_2lcc _cBK
999			_c17858 _d17858